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Brand Name: | Krunter |
Model Number: | KES650H12A8L-2M |
High power density with Trench FS IGBT technology
Low VCE(sat)
Parallel operation enabled ; symmetrical design & positive temperature coefficient
Low inductance design
Integrated NTC temperature sensor
Isolated baseplate using DBC technology
Compact and robust design with molded terminals
TYPE | VBR Volts |
VGS(th) Volts |
ID Amps |
RDS(on) mΩ |
IDSS uA |
TJ | Rth(JC) K/W |
Ptot Watts |
Circuit | Package | Technology |
KES400H12A8L-2M | 1200V | 3.2V | 400A | 3.7mΩ | 200uA | 175℃ | 0.064 | 2230W | 2 Pack | ECDUAL3 | SIC MOSFET |
KES650H12A8L-2M | 1200V | 3.2V | 650A | 2.2mΩ | 200uA | 175℃ | 0.064 | 3200W | 2 Pack | SIC MOSFET |