Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations
Product Details
| Moisture Sensitive: | YES | Output Current: | 60A |
|---|---|---|---|
| Dimensions: | 25mm X 50mm X 10mm | Close: | No Shutdown |
| Maximum Operating Temperature: | 150°C | Input Range: | 4.5V~5.5V |
| Collector-Emitter Voltage: | 600V | Number Of Pins: | 7 |
| Lead Times: | Immediately Shipment | Contact Resistance: | 30mΩ |
| Thermal Resistance: | 0.5°C/W | Peak Repetitive Reverse: | 100-1600V |
| Application: | Power Conversion | Qualification: | Industrial |
| Organization: | 512 M X 16 | ||
| Highlight |
Compact IGBT Module,Space-Saving IGBT Module,Lightweight IGBT Module |
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Product Description
KES650H12A8L-2M
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High power density with Trench FS IGBT technology
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Low VCE(sat)
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Parallel operation enabled ; symmetrical design & positive temperature coefficient
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Low inductance design
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Integrated NTC temperature sensor
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Isolated baseplate using DBC technology
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Compact and robust design with molded terminals
Internal Circuit Diagram
Specification Parameters
| TYPE | VBR Volts |
VGS(th) Volts |
ID Amps |
RDS(on) mΩ |
IDSS uA |
TJ | Rth(JC) K/W |
Ptot Watts |
Circuit | Package | Technology |
| KES400H12A8L-2M | 1200V | 3.2V | 400A | 3.7mΩ | 200uA | 175℃ | 0.064 | 2230W | 2 Pack | ECDUAL3 | SIC MOSFET |
| KES650H12A8L-2M | 1200V | 3.2V | 650A | 2.2mΩ | 200uA | 175℃ | 0.064 | 3200W | 2 Pack | SIC MOSFET |
Product Highlights
KES650H12A8L-2M High power density with Trench FS IGBT technology Low VCE(sat) Parallel operation enabled ; symmetrical design & positive temperature coefficient Low inductance design Integrated NTC temperature sensor Isolated baseplate using DBC technology Compact and robust design with molded ...
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